Production specification
Schottky Barrier Rectifier
MBRF20150--MBRF20200
FEATURES
z Metal-Semicondutcor Junction Wit...
Production specification
Schottky Barrier Rectifier
MBRF20150--MBRF20200
FEATURES
z Metal-Semicondutcor Junction With Guard Ring.
Pb
z Epitaxial Construction.
Lead-free
z Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capacity.
z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
ITO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBRF20150 MBRF20200
Unit
VRRM
Recurrent Peak Reverse Voltage
150 200 V
VRMS VDC I(AV) IFSM RθJC Tj Tstg
RMS Reverse Voltage
DC Blocking Voltage
Average Forward Total Device Rectified Current @TA=100℃
Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load Typical Thermal Resistance Junction to Case (Note 1)
Operating Junction and StorageTem-perature Range
105 140 150 200
20 150 1.5 -55 to +150
V V A A ℃/W ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse Current
Symbol Test conditions
IR
VR=VRRM,TA=25℃ VR=VRRM,TA=125℃
MBRF20150
MBRF20200
MAX
0.1 50
Forward Voltage
VF
IF=20A
0.90 0.95
UNIT mA V
R036 Rev.A
www.gmicroelec.com 1
Schottky Barrier Rectifier
Production specification
MBRF20150--MBRF20200
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
R036 Rev.A
www.gmicroelec.com 2
Production specification
Schottky Barrier Rectifier
MBRF20150--MBRF20200
PACKAGE OUTLINE
Plastic surface mounted package AC E
G
FB D
H
RM N
L P
J...