JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD10150CT SCHOTTKY BARRIER RE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD10150CT
SCHOTTKY BARRIER RECTIFIER
TO-252-2L
FEATURES z
Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency
1. ANODE 2. CATHODE 3. ANODE
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM VR
VR(RMS)
BDTICIO
Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current @Tc=155℃ Non-Repetitive peak forward surge current
Value
150
105 10
Unit
V
V A
IFSM 8.3ms half sine wave
120 A
PD Power dissipati
1.25 W
RΘJA Tj
Thermal resistance from junction to ambient Junction temperature
80 ℃/W 125 ℃
Tstg Storage temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=100μA
150 V
Reverse current
IR VR=150V
100 μA
Forward voltage
VF1 VF2*
IF=5A IF=10A
1V 1V
Typical total capacitance
Ctot VR=5V,f=1MHz
70 pF
*Pulse test
www.BDTIC.com/jcst
Typical Characteristics MBRD10150CT
Forward Characteristics
10000
Reverse Characteristics
1000
REVERSE CURRENT I (uA) R
FORWARD CURRENT I (mA) F
1000
T =100℃ a
100 T =100℃ a 10
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