MBRD10200CT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Diodes MBRD10200CT SCHOTTKY BARRIER RECTIFIER FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications TO-25522-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR(RMS) IO IFSM Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current 8.3ms half sine wave PD RΘJA Tj Tstg Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 200 140 10 125 1.25 80 125 -55~+150 Unit V V A A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=100μA Reverse current IR VR=200V Forward voltage VF(1) VF(2)* IF=5A IF=10A Typical total capacitance Ctot VR=4V,f=1MHz *Pulse test Min 200 Typ Max 50 0.92 1.1 50 Unit V μA V V pF A-3,Mar,2014 Typical Characteristics MBRD10200CT FORWARD CURRENT I (mA) F T a =100℃ T a =25℃ Forward Characteristics 10000 1000 100 10 1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE V (mV) F REVERSE CURRENT I (uA) R Revers...