www.vishay.com
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectif...
www.vishay.com
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
TMBS®
TO-220AB
PIN 1 PIN 3
3 2 1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C TO-220AB
Diode variation
Dual common cathode
FEATURES Trench MOS
Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application
MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum peak reverse voltage Maximum DC blocking voltage
total device Maximum average forward rectified current at TC = 105 °C per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change Ope...