MBR10100CT

www.vishay.com MBR1090CT, MBR10100CT Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum peak reverse voltage Maximum DC blocking voltage total device Maximum average forward rectified current at TC = 105 °C per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change Ope...