C2335

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings 500 400 7.0 7.0 15 Unit V V V A A 3.5 40 1.5 150 −55 to +150 A W W °C °C ORDERING INFORMATION Part No. 2SC2335 Package TO-220AB (TO-220AB) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14861EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 ELECTRICAL C...