Si2392DS

N-Channel 100 V (D-S) MOSFET Si2392DS Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.1 100 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (Typ.) 2.9 nC TO-236 (SOT-23) G1 S2 3D Top View Si2392DS (E2)* * Marking Code Ordering Information: Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs Power Management for Mobile Computing ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) 5 s Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. Symbol RthJA RthJF Typical 75 40 L...