TGD30N40P

TGD30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 56.8 22.7 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%. Unit V V A A A W W ℃ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC RθJA August. 2012 : Rev0 www.trinnotech.com Value 2.2 110 Unit ℃/W ℃/W 1/6 TGD30N40P Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 400V, VGE = 0V VCE = 0V, VGE = ±30V 400 -- -- V -- -- 100 µA ...