Document
DS28E80
EVALUATION KIT AVAILABLE
Gamma Radiation Resistant 1-Wire Memory
General Description
The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.
Applications
●● Identification of Medical Consumables ●● Identification and Calibration Medical Tools/Accessories
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
Ordering Information appears at end of data sheet.
Features and Benefits
●● High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization • Resistant Up to 75kGy (kiloGray) of Gamma Radiation • Reprogrammable 248 Bytes of User Memory
●● Lower Block Size Provides Greater Flexibility in Programming User Memory • Memory is Organized as 8-Byte Blocks • Each Block Can Be Written 8 Times • User-Programmable Write Protection for Individual Memory Blocks
●● Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
●● Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability • Unique Factory-Programmed, 64-Bit Identification Number • Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max) • Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing • ±8kV HBM ESD Protection (typ) for IO Pin • 6-Pin TDFN Package
Typical Application Circuit
VCC
VCC PIOX
µC
PIOY GND
10kΩ BSS84
RPUP
DS28E80
IO GND
19-7120; Rev 0; 9/14
DS28E80
Gamma Radiation Resistant 1-Wire Memory
Absolute Maximum Ratings
IO Voltage Range to GND.....................................-0.5V to +4.0V IO Sink Current.................................................................±20mA Operating Temperature Range............................ -40°C to +85°C Junction Temperature.......................................................+150°C Storage Temperature Range............................. -55°C to +125°C
Lead Temperature (soldering, 10s).................................. +300°C Soldering Temperature (reflow)
TDFN............................................................................ +260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics (Note 1)
TDFN Junction-to-Ambient Thermal Resistance (θJA)...........60°C/W Junction-to-Case Thermal Resistance (θJC)................11°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
IO PIN: GENERAL DATA
1-Wire Pullup Voltage 1-Wire Pullup Resistance Input Capacitance Input Load Current
High-to-Low Switching Threshold
VPUP RPUP CIO
IL
VTL
(Note 3) VPUP = 3.3V ±10% (Note 4) (Notes 5, 6) IO pin at VPUP
(Notes 6, 7, 8)
Input Low Voltage
Low-to-High Switching Threshold
VIL (Notes 3, 9) VTH (Notes 6, 7, 10)
Switching Hysteresis Output Low Voltage Recovery Time
Time Slot Duration (Notes 3, 14)
VHY VOL tREC
tSLOT
(Notes 6, 7, 11)
IOL = 4mA (Note 12) RPUP = 750Ω (Notes 3, 13) Standard speed
Overdrive speed
IO PIN: 1-Wire RESET, PRESENCE DETECT CYCLE
Reset Low Time (Note 3)
tRSTL
Standard speed Overdrive speed
Reset High Time (Note 15)
tRSTH
Standard speed Overdrive speed
Presence Detect Sample Time (Notes 3, 16)
tMSP
Standard speed Overdrive speed
IO PIN: 1-Wire WRITE
Write-Zero Low Time (Notes 3, 17)
tW0L
Standard speed Overdrive speed
MIN TYP MAX UNITS
2.97 300
10 65 13
6.5 5 0.65 x VPUP
0.75 x VPUP
0.3
3.63 750 22
0.3
0.4
V Ω nF µA
V
V
V
V V µs
µs
480 640 µs
48 80 480
µs 48 60 72
µs 8 10
60 120 µs
8 16
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DS28E80
Gamma Radiation Resistant 1-Wire Memory
Electrical Characteristics (continued)
(TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Write-One Low Time (Notes 3, 17)
tW1L
.