RB095B-90

Schottky Barrier Diode RB095B-90 Applications General rectification Dimensions(Unit : mm) Data Sheet Land size figure(Unit : mm) 6.0 3.0 2.0 6.0 Features 1)Power mold type.(CPD) 2)Low VF 3)High reliability Construction Silicon epitaxial planar 1.6 1.6 ROHM : CPD JEITA : SC-63 Manufacture Date CPD 2.3 2.3 Structure (2) (1) (3) Taping specifications(Unit : mm) 2.0 0.05 4.0 0.1 8.0 0.1 1.55 0.1 0 TL 7.5 0.05 2.5 0.1 0.4 0.1 10.1 0.1 16.0 0.2 10.1 0.1 13.5 0.2 0 0.5 6.8 0.1 8.0 0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 90 90 6 Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature IFSM Tj 45 150 Storage temperature Tstg 40 to 150 (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C 3.0 0.1 Unit V V A A C C 2.7 0.2 Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol Min. Typ. Max. VF - - 0.75 IR - - 150 jc - - 6.0 Unit V A C/W Conditions IF=3.0A VR=90V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.F RB095B-90 Electrical characteristics curves Data Sheet FORWARD CURRENT : IF(A) FORWARD VOLTAGE : VF(mV) 10 Ta=150C 1 Ta=125C Ta=75C 0.1 Ta=25C Ta=-25C 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 740 Ta=25C IF=3A 730 ...