Silicon MOSFET
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はRoHS(EU 2002/95...
Description
http:の//wwwし.はsてeホmiー、coムn.ペpaーnとジasをo、niごc.しcoて.くjいpだまさすい、。。3.0.46±+–000...を120533.80±0.25 6.3±0.2
はRoHS(EU 2002/95/EC)にしています。
(IPD)
MIP0253SP
MOS
■
MOS FET CMOS
(85 VAC to 274 VAC)
(
)
9.4±0.3
87
5
0.25+–00..1005
Unit: mm
7.62±0.25
3 to 15°
■ AC
■
etc. (
)
Ta = 25°C
VD 700
V
VB 7
V
VF 7
V
ID 300 mA
Tch 150 °C
Tstg −55 to +150
°C
1234 2.54±0.25
1.2±0.25 (2,3,7PIN)
0.5±0.1
0.4±0.1 0.6±0.1 (1,4,5,8PIN)
1 : Bypass 5 : Drain
2 : Source
3 : Source 7 : Source
4 : FB
8 : Source
DIP8-A1(CF) Package
: MIP0253
■
1
5
Max Duty Clock
4 : 2006 6
SQ R
SLB00009BJD
GND
2 (3, 7, 8)
1
http:の//wwwし.はsてeホmiー、coムn.ペpaーnとジasをo、niごc.しcoて.くjいpだまさすい、。。を
MIP0253SP
はRoHS(EU 2002/95/EC)にしています。
■ TC = 25°C±2°C
fOSC MAXDC
IFB IHYS VFB VCC
IS
Ich
IFBO VUV
FB : Open FB : Open
IFB = −25 µA
VB = VCC+ 0.2 V, VFB = 0 V VB = VCC+ 0.2 V, FB : Open VB = 0 V VB = 4.0 V VFB = 0 V
40 44 48 65 68 71 −60 −50 −40 −15 −10 −5
1.5 5.4 5.7 6.0
150 130 3.5 2.5 −40 4.7 5.0 5.3
kHz % µA µA V V µA µA mA mA µA V
ILIMIT ton(BLK) td(OCL) TOTP ∆TOTP
0.135 130
0.150 200 100 140 70
0.165 150
A ns ns °C °C
RDS(ON) IDSS VDSS tr tf
ID = 25 mA VB = 6.5 V, VFB = 0 V, VDS = 650 V VB = 6.5 V, VFB = 0 V, ID = 100 µA
31.2 36.0 50
700 100 50
Ω µA V ns ns
VD(min) Rth(j-a)
Ta = 25°C
(3 cm × 3 cm)
50 90
V °C/W
2 SLB00009BJD
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1) Power lntegrations() 2) IPD
IPD 3) IPD
IPD 4) IPD
)MIP5MIP5MIP7 IPD...
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