K2885

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 10mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A A W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF Body to drain diode reverse trr recovery time Note: 1. Pulse test Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — 2SK2885(L), 2SK2885(S) Typ Max —— —— — 10 — — 10 15 30 1570 1100 410 32 300 180 200 1.0 ±10 2.0 14 25 — ...