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H9TP32A4GDBCPR

Hynix Semiconductor

4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)

CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subjec...


Hynix Semiconductor

H9TP32A4GDBCPR

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Description
CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.3 / Jan. 2013 1 Preliminary H9TP32A4GDBCPR 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32) Document Title CI-MCP 4GB eNAND(x8) Flash / 4Gb (x32) LPDDR2-S4B Revision History Revision No. History Draft Date 0.1 - Initial Draft Sep. 2012 0.2 - Corrected Ball Assignment Sep. 2012 - Updated IDD specifications - Corrected tERR(2per, DDR2 1066) in AC TIMING PARAMETERS 0.3 from 135 to 132 Jan. 2013 - Corrected Revision ID1 in MR6 Basic Configuration2 from 00000001B to 00000010B Remark Preliminary Preliminary Preliminary Rev 0.3 / Jan. 2013 2 Preliminary H9TP32A4GDBCPR 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32) FEATURES [ CI-MCP ] ● Operation Temperature - (-25)oC ~ 85oC ● Package - 162-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ LPDDR2 S4B ] ● Packaged NAND flash memory with MultiMediaCard interface ● e-NAND system specification, compliant with V4.41 ● Full backward compatibility with previous eNAND system specification ● Bus mode - High-speed eMMC protocol. - Three different data bus widths: 1 bit, 4 bits,8 bits. - Data transfer rate: up to 104Mbyte/s - DDR mode supported ● Operating voltage range: - VCCQ = 3.3/1.8V - VCC = 3.3V ● Error free memory access - Internal error correction...




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