IRF7756PbF

l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free VDSS -12V PD-96017A IRF7756PbF HEXFET® Power MOSFET RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID ±4.3A ±3.4A ±2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range ' & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! TSSOP-8 Max. -12 -4.3 -3.5 -17 1.0 0.64 8.0 ±8.0 -55 to +150 Units V A W W mW/°C V °C Thermal...