IRF7757PbF

l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Common Drain Configuration l Lead-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. VDSS 20V PD-96018 IRF7757PbF HEXFET® Power MOSFET RDS(on) max (mW) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A 1 2 3 4 1 = S1 2 = G1 3 = S2 4 = G2 8 7 6 5 8= D 7= D 6= D 5= D TSSOP-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.8 3.9 19 1.2 0.76 9.5 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA www.irf...