100V N-Channel MOSFET
Main Product Characteristics
VDSS RDS(on)
ID
100V 16mΩ(typ.)
60A
DPAK
Features and Benefits
Advanced trench MOSFET...
Description
Main Product Characteristics
VDSS RDS(on)
ID
100V 16mΩ(typ.)
60A
DPAK
Features and Benefits
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSF1020D
100V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 60 50 240 143 2.0 100 ± 20 240 39
-55 to + 175
Units
A
W W/°C
V V mJ A °C
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Rev.2.2
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case③ Junction-to-ambient ④
SSF1020D
100V N-Channel MOSFET
Typ. 1.05 —
Max. — 62
Units ℃/W ℃/W
Electrical Characteristics @TA=25...
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