SSF1020D

Main Product Characteristics VDSS RDS(on) ID 100V 16mΩ(typ.) 60A DPAK Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF1020D 100V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 60 50 240 143 2.0 100 ± 20 240 39 -55 to + 175 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.2.2 Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient ④ SSF1020D 100V N-Channel MOSFET Typ. 1.05 — Max. — 62 Units ℃/W ℃/W Electrical Characteristics @TA=25...