SPU21N05L

SPD 21N05L SIPMOS® Power Transistor Features N channel Enhancement mode Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Logic Level dv/dt rated 175˚C operating temperature VDS RDS(on) ID 55 0.04 20 V Ω A Type SPD21N05L SPU21N05L Package Ordering Code Packaging P-TO252 Q67040-S4137 Tape and Reel P-TO251-3-1 Q67040-S4131-A2 Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C ID Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 20 A, VDD = 25 V, RGS = 25 Ω IDpulse EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 20 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C VGS Ptot Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg Value 20 14 80 90 5.5 6 ±20 55 -55... +175 55/175/56 Unit A mJ kV/µs V W ˚C Data Sheet 1 06.99 SPD 21N05L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 2.7 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characterist...