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DG5N60 Dataheets PDF



Part Number DG5N60
Manufacturers DGME
Logo DGME
Description N-Channel MOSFET
Datasheet DG5N60 DatasheetDG5N60 Datasheet (PDF)

DG5N60 N N-CHANNEL ENHANCEMENT MODE MOSFET :V1.0 General Description DG5N60N,, ,,,。 ,,。 DG5N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS .

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DG5N60 N N-CHANNEL ENHANCEMENT MODE MOSFET :V1.0 General Description DG5N60N,, ,,,。 ,,。 DG5N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 5.0 2.4 12 V A Ω pF Symbol Package 1 /11 ABSOLUTE MAXIMUM RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Continues Drain Current ( 1) Plused Drain Current (note1) Gate-to-Source Voltage (2) Single Pulsed Avalanche Energy (note2) ( 1) Avalanche Current (note1) ( 1) Repetitive Avalanche Energy (note1) (3) Peak Diode Recovery (note3) Power Dissipation Power Dissipation Derating Factor Operating and Storage Temperature Range Maximum Temperature for Soldering Symbol VDSS Tc=25℃ ID Tc=100℃ IDM VGS EAS IAR EAR dv/dt Tc=P2D5℃ AboPvDe(D2F5) ℃ TO-251/TO-252 TO-220/TO-262 TO-220F TO-251/TO-252 TO-220/TO-262 TO-220F TJ,TSTG TL Value 600 5* 2.5* 20 ±30 218 4.0 10 4.5 51 100 33 0.39 0.8 0.26 150,-55~+150 300 Unit V A A V mJ A mJ V/ns W W/℃ ℃ ℃ THERMAL CHARACTERIASTIC Parameter Thermal Resistance,Junction to Case Symbol TO-251/TO-252 Rth(j-c) TO-220/TO-262 TO-220F Thermal Resistance,Junction to Ambient Rth(j-A) TO-251/TO-252 TO-220/TO-262 TO-220F * * Drain current limited by maximum junction temperature Max 2.5 1.25 3.79 83 62.5 62.5 Unit W W/℃ 2 /11 ELECTRICAL CHARACTERISTICS Off-Characteristics Parameter - Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse Symbol BVDSS △ BVDSS/ △TJ IDSS IGSSF IGSSR Tests Conditions ID=250µA, VGS=0V ID=250µA, referenced to 25℃ VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃ VDS=0V, VGS =30V VDS=0V, VGS = -30V Min 600 - - - Type - 0.7 - - Max Unit -V - V/℃ 1 µA 10 100 nA -100 nA On-Characteristics Parameter Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Symbol VGS(th) RDS(ON) gfs Tests Conditions VDS = VGS , ID=250µA VGS=10V , ID=2.5A VDS = 40V, ID=2.5A (note4) Min 2.0 Type Max Unit - 4.0 V - 1.8 2.4 Ω - 4.5 - S Dynamic Characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ciss Tests Conditions Min - Type Max Unit 600 720 pF Coss VDS=25V, VGS =0V, f=1.0MHZ - 65 95 pF Crss - 12 20 pF 3 /11 Switching Characteristics Parameter Symbol Turn-On delay time td(on) Tests Conditions Turn-On rise time Turn-Off delay time tr td(off) VDD=300V, ID=5A, RG=25Ω (note 4,5) Turn-Off Fall time tf Min - Type 25 Max Unit 60 ns - 58 125 ns - 75 160 ns - 58 125 ns Total Gate Charge -Gate-Source charge -Gate-Drain charge Qg Qgs VDS =480V , ID=5A, VGS =10V (note 4,5) Qgd - 30 35 nC 3.8 - nC 14 - nC - Drain-Source Diode Characteristics and Maximum Ratings Parameter Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Symbol Tests Conditions IS ISM Min Type Max Unit - - 5A - - 20 A Drain-Source Diode Forward Voltage VSD VGS=0V, IS=5A - - 1.5 V Reverse recovery time Reverse recovery charge trr VGS=0V, IS=5A - 340 - ns Qrr dIF/dt=100A/µs (note 4) - 2.7 - µC : 1: 2:L=25mH, IAS=4A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤5A, di/dt ≤300A/µs, VDD≤BVDSS, TJ=25℃ 4::≤300µs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=25mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3:ISD ≤5A, di/dt ≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 5:Essentially independent of operating temperature 4 /11 ELECTRICAL CHARACTERISTICS (curves) 1. Fig. 1 On-State Characteristics 2. Fig. 2 Transfer Characteristics 3. 4. Fig. 3 Breakdown Voltage Variation vs Temperature Fig. 4 On-Resistance Variation vs Temperature 5. Fig. 5 Capacitance Characteristics 5 /11 6. Fig. 6 Gate Charge Characteristics 7. Fig. 7 Maximum Safe Operating Area 8. Fig. 8 Maximum Drain Current vs Case Temperature 9. (TO-251/TO-252) Fig. 9 Transient Thermal Response Curve (TO-251/TO-252) 10. (TO-220/TO-262) Fig. 10 Transient Thermal Response Curve(TO-220/TO-262) 11. (TO-220F) Fig. 11 Transient Thermal Response Curve(TO-220F) 6 /11 TEST CIRCUITS AND WAVEFORMS 12. Fig.12 Resistive Switching Test Circuit & Waveforms 13. Fig.13 Gate Charge Test Circuit & Waveform 14. Fig.14 Unclamped Inductive Switching Test Circuit & Waveforms 7 /11 TPACKAGE MECHANICAL DATA TO-251 (1) DIM MILLIMETERS A 2.2±0.5 B 5.2±0.25 C 5.3±0.25 D 4.5±0.5 E 6.3±0.25 F 2.3±0.05 G 0.6±0.05 DIM H I J K L M N MILLIMETERS 1.8±0.5 0.8±0.05 0.508±0.015 2.3±0.25 0.5±0.1 0.508±0.015 7.5±0.5 TO-251 (.


25L1606E DG5N60 CLAN065WA413XB


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