Document
DG5N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
:V1.0
General Description
DG5N60N,, ,,,。 ,,。
DG5N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
600 5.0 2.4 12
V A Ω pF
Symbol Package
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ABSOLUTE MAXIMUM RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage Continues Drain Current ( 1) Plused Drain Current (note1) Gate-to-Source Voltage (2) Single Pulsed Avalanche Energy (note2) ( 1) Avalanche Current (note1) ( 1) Repetitive Avalanche Energy (note1) (3) Peak Diode Recovery (note3)
Power Dissipation
Power Dissipation Derating Factor
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Symbol VDSS
Tc=25℃ ID Tc=100℃
IDM
VGS
EAS
IAR
EAR
dv/dt
Tc=P2D5℃ AboPvDe(D2F5) ℃
TO-251/TO-252
TO-220/TO-262 TO-220F
TO-251/TO-252 TO-220/TO-262
TO-220F
TJ,TSTG
TL
Value 600
5* 2.5* 20
±30
218
4.0
10
4.5 51 100 33 0.39 0.8 0.26 150,-55~+150
300
Unit V A A V mJ A mJ V/ns
W
W/℃
℃ ℃
THERMAL CHARACTERIASTIC
Parameter
Thermal Resistance,Junction to Case
Symbol
TO-251/TO-252
Rth(j-c) TO-220/TO-262
TO-220F
Thermal Resistance,Junction to Ambient
Rth(j-A)
TO-251/TO-252 TO-220/TO-262
TO-220F
* * Drain current limited by maximum junction temperature
Max 2.5 1.25
3.79 83
62.5 62.5
Unit W
W/℃
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ELECTRICAL CHARACTERISTICS
Off-Characteristics
Parameter - Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-body leakage current, forward
Gate-body leakage current, reverse
Symbol BVDSS △ BVDSS/ △TJ
IDSS
IGSSF
IGSSR
Tests Conditions ID=250µA, VGS=0V
ID=250µA, referenced to 25℃
VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃
VDS=0V, VGS =30V
VDS=0V, VGS = -30V
Min 600
-
-
-
Type
-
0.7
-
-
Max Unit
-V
- V/℃
1 µA
10
100 nA
-100 nA
On-Characteristics
Parameter Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Symbol VGS(th)
RDS(ON)
gfs
Tests Conditions VDS = VGS , ID=250µA
VGS=10V , ID=2.5A
VDS = 40V, ID=2.5A (note4)
Min
2.0
Type Max Unit
- 4.0 V
- 1.8 2.4 Ω
- 4.5 - S
Dynamic Characteristics
Parameter Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
Ciss
Tests Conditions
Min
-
Type Max Unit
600 720 pF
Coss VDS=25V, VGS =0V, f=1.0MHZ -
65 95 pF
Crss - 12 20 pF
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Switching Characteristics
Parameter
Symbol
Turn-On delay time
td(on)
Tests Conditions
Turn-On rise time Turn-Off delay time
tr td(off)
VDD=300V, ID=5A, RG=25Ω (note 4,5)
Turn-Off Fall time
tf
Min
-
Type
25
Max Unit
60 ns
- 58 125 ns
- 75 160 ns
- 58 125 ns
Total Gate Charge -Gate-Source charge -Gate-Drain charge
Qg
Qgs
VDS =480V , ID=5A, VGS =10V (note 4,5)
Qgd
-
30 35 nC 3.8 - nC 14 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Symbol
Tests Conditions IS
ISM
Min Type Max Unit - - 5A
- - 20 A
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=5A
- - 1.5 V
Reverse recovery time
Reverse recovery charge
trr
VGS=0V, IS=5A
- 340 - ns
Qrr dIF/dt=100A/µs (note 4) - 2.7 - µC
:
1: 2:L=25mH, IAS=4A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤5A, di/dt ≤300A/µs, VDD≤BVDSS, TJ=25℃ 4::≤300µs,≤2% 5:
Notes:
1:Pulse width limited by maximum junction temperature 2:L=25mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3:ISD ≤5A, di/dt ≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
1. Fig. 1 On-State Characteristics
2. Fig. 2 Transfer Characteristics
3.
4.
Fig. 3 Breakdown Voltage Variation vs Temperature Fig. 4 On-Resistance Variation vs Temperature
5. Fig. 5 Capacitance Characteristics
5 /11
6. Fig. 6 Gate Charge Characteristics
7. Fig. 7 Maximum Safe Operating Area
8. Fig. 8 Maximum Drain Current vs Case Temperature
9. (TO-251/TO-252) Fig. 9 Transient Thermal Response Curve (TO-251/TO-252)
10. (TO-220/TO-262) Fig. 10 Transient Thermal Response Curve(TO-220/TO-262)
11. (TO-220F) Fig. 11 Transient Thermal Response Curve(TO-220F)
6 /11
TEST CIRCUITS AND WAVEFORMS
12. Fig.12 Resistive Switching Test Circuit & Waveforms
13. Fig.13 Gate Charge Test Circuit & Waveform
14. Fig.14 Unclamped Inductive Switching Test Circuit & Waveforms
7 /11
TPACKAGE MECHANICAL DATA TO-251 (1)
DIM MILLIMETERS
A 2.2±0.5 B 5.2±0.25 C 5.3±0.25
D 4.5±0.5
E 6.3±0.25 F 2.3±0.05
G 0.6±0.05
DIM
H I J K L M N
MILLIMETERS 1.8±0.5 0.8±0.05
0.508±0.015
2.3±0.25 0.5±0.1
0.508±0.015 7.5±0.5
TO-251 (.