N-Channel MOSFET
N-Channel 40-V (D-S) MOSFET
SiR426DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0105 at VGS = 10 V 40
0...
Description
N-Channel 40-V (D-S) MOSFET
SiR426DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0105 at VGS = 10 V 40
0.0125 at VGS = 4.5 V
ID (A) 30a 30a
Qg (Typ.) 9.3 nC
PowerPAK SO-8
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information:
SiR426DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converters - Synchronous Buck - Synchronous Rectifier
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 40
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VGS ID
± 20 30a 30a 15.9b, c 12.8b, c
Pulsed Drain Current
IDM 70
Avalanche Current Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
TC = 25 °C TA = 25 °C
IAS EAS
IS
20
20 30a 4b, c
TC = 25 °C
41.7
Maximum Power Dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
PD
26.7 4.8b, c 3.1b, c
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150 260
Unit V
A
mJ A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
Symbol RthJA RthJC
Typical 21 2.4
Maximum 26 3
Unit °C/W
Notes: a. Based on TC = 25 °C. Package limited...
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