SiR812DP

www.vishay.com SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.00145 at VGS = 10 V 0.00200 at VGS = 4.5 V ID (A) a 60 60 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 109 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Motor control Industrial Load switch ORing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 30 ± 20 60 a 60 a 48.9 b, c 39 b, c 400 60 a 5.6 b, c 25 31.2 104 66.6 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 15 ...