22N055

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) Low Ciss : Ciss = 590 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±22 ±55 Total Power Dissipation (TA = 25°C) PT 1.2 Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2 PT IAS EAS 45 13 / 5 16 / 25 Channel Temperature Tch 175 Storage Temperature Tstg –55 to +175 V V A A W W A mJ °C °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.) (TO-252) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 3.33 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are ava...