IXFH22N55
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
IXFH 22N55
VDSS
ID (cont)
RDS(o...
Description
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
IXFH 22N55
VDSS
ID (cont)
RDS(on) trr
= 550 V
= 22 A = 0.27 W £ 250 ns
Preliminary data
Symbol
VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
P D
TJ TJM Tstg TL M
d
Weight
Symbol
V DSS
VGS(th) I
GSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings
550 V 550 V ±20 V ±30 V
22 A 88 A 22 A 30 mJ
5 V/ns
300 W
-55 ... +150 150
-55 ... +150 300
°C °C °C °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V GS
=
0
V,
I
D
=
250
mA
VDS = VGS, ID = 4 mA
V GS
=
±20
V, DC
V DS
=
0
V = 0.8 V DS DSS VGS = 0 V
T J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
550 2
V 4.5 V
±100 nA
250 mA 1 mA
0.27 W
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
International standard packages JEDEC TO-247 AD
Low R HDMOSTM process DS (on)
Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated Low package inductance (< 5 nH)
- easy to drive and to protect Fast intrinsic Rectifier
Applications
Power Factor Control Circuits Uninterruptible Power Suppl...
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