Document
MDP15N60G / MDF15N60G N-Channel MOSFET 600V
MDP15N60G / MDF15N60G
N-Channel MOSFET 600V, 15A, 0.40Ω
General Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 15A RDS(ON) ≤ 0.40Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
GDS
TO-220 MDP Series
G DS
TO-220F MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(2)
Power Dissipation
Repetitive Avalanche Energy(2) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Aug. 2021 Version 1.2
1
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP15N60G MDF15N60G
600
±30
15
15*
9.5
9.5*
60
60*
231.4
36.7
1.85
0.29
23.1
4.5
511
-55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Symbol RθJA RθJC
MDP15N60G 62.5 0.54
MDF15N60G 62.5 3.4
Unit oC/W
Magnachip Semiconductor Ltd.
MDP15N60G / MDF15N60G N-Channel MOSFET 600V
Ordering Information
Part Number MDP15N60GTH MDF15N60GTH
Marking MDP15N60G MDF15N60G
Temp. Range -55~150oC -55~150oC
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen Free Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
Drain Cut-Off Current
IDSS
VDS = 600V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 7.5A
-
Forward Transconductance
gfs
VDS = 30V, ID = 7.5A (2)
-
Dynamic Characteristics
Total Gate Charge Gate-Source Charge
Qg
-
Qgs
VDS = 480V, ID = 15.0A, VGS = 10V (2)
-
Gate-Drain Charge
Qgd
-
Input Capacitance
Ciss
-
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
Output Capacitance
Coss
-
Turn-On Delay Time
td(on)
-
Rise Time Turn-Off Delay Time
tr
VGS = 10V, VDS = 300V, ID = 15.0A,
-
td(off)
RG = 25Ω (2)
-
Fall Time
tf
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source Diode Forward Current
IS
-
Source-Drain Diode Forward Voltage
VSD
IS = 15.0A, VGS = 0V
-
Body Diode Reverse Recovery Time
trr
-
IF = 15.0A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤15A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=7.9mH, IAS=15.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Typ
0.34 11.5
49.0 15.0 19.1 2311 10.8 258 57 86 137 47
15 382 4.47
Max
Unit
V
5.0
1
μA
100
nA
0.40
Ω
-
S
-
-
nC
-
-
-
pF
-
-
ns
-
-
-
A
1.4
V
-
ns
-
μC
Aug. 2021 Version 1.2
2
Magnachip Semiconductor Ltd.
ID,Drain Current [A]
MDP15N60G / MDF15N60G N-Channel MOSFET 600V
40
Vgs=5.5V =6.0V
=6.5V
30
=7.0V
=7.5V
=8.0V
=10.0V
=15.0V 20
Notes
10
1. 250㎲ Pulse Test
2. T =25℃ C
0
5
10
15
20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V 2. ID = 7.5 A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T , Junction Temperature [oC] J
Fig.3 On-Resistance Variation with Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON) R [Ω ]
0.7
0.6
0.5 VGS=10.0V VGS=20V
0.4
0.3 9 12 15 18 21 24 27 30 33 36 39 42 45
ID,Drain Current [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
1.2
※ Notes : 1. VGS = 0 V 2. I = 250㎂
D
1.1
1.0
0.9
0.8
-50
0
50
100
150
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
IDR Reverse Drain Current [A]
* Notes ; 1. Vds=30V
150℃
25℃ -55℃
10
※ Notes :
1. V = 0 V GS
2.250s Pulse test
150℃
25℃
10
ID(A)
4
6
8
10
VGS [V]
Fig.5 Transfer Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Aug. 2021 Version 1.2
3
Magnachip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDP15N60G / MDF15N60G N-Channel MOSFET 600V
10
※ Note : ID = 15.0A
8
120V 300V 480V
6
4
2
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Fig.7 Gate Charge .