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MDP15N60G Dataheets PDF



Part Number MDP15N60G
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP15N60G DatasheetMDP15N60G Datasheet (PDF)

MDP15N60G / MDF15N60G N-Channel MOSFET 600V MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 15A  RDS(ON) ≤ 0.40Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  .

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MDP15N60G / MDF15N60G N-Channel MOSFET 600V MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 15A  RDS(ON) ≤ 0.40Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D G GDS TO-220 MDP Series G DS TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(2) Power Dissipation Repetitive Avalanche Energy(2) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug. 2021 Version 1.2 1 Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP15N60G MDF15N60G 600 ±30 15 15* 9.5 9.5* 60 60* 231.4 36.7 1.85 0.29 23.1 4.5 511 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC MDP15N60G 62.5 0.54 MDF15N60G 62.5 3.4 Unit oC/W Magnachip Semiconductor Ltd. MDP15N60G / MDF15N60G N-Channel MOSFET 600V Ordering Information Part Number MDP15N60GTH MDF15N60GTH Marking MDP15N60G MDF15N60G Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 7.5A - Forward Transconductance gfs VDS = 30V, ID = 7.5A (2) - Dynamic Characteristics Total Gate Charge Gate-Source Charge Qg - Qgs VDS = 480V, ID = 15.0A, VGS = 10V (2) - Gate-Drain Charge Qgd - Input Capacitance Ciss - Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - Output Capacitance Coss - Turn-On Delay Time td(on) - Rise Time Turn-Off Delay Time tr VGS = 10V, VDS = 300V, ID = 15.0A, - td(off) RG = 25Ω (2) - Fall Time tf - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - Source-Drain Diode Forward Voltage VSD IS = 15.0A, VGS = 0V - Body Diode Reverse Recovery Time trr - IF = 15.0A, dl/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr - Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤15A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=7.9mH, IAS=15.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Typ 0.34 11.5 49.0 15.0 19.1 2311 10.8 258 57 86 137 47 15 382 4.47 Max Unit V 5.0 1 μA 100 nA 0.40 Ω - S - - nC - - - pF - - ns - - - A 1.4 V - ns - μC Aug. 2021 Version 1.2 2 Magnachip Semiconductor Ltd. ID,Drain Current [A] MDP15N60G / MDF15N60G N-Channel MOSFET 600V 40 Vgs=5.5V =6.0V =6.5V 30 =7.0V =7.5V =8.0V =10.0V =15.0V 20 Notes 10 1. 250㎲ Pulse Test 2. T =25℃ C 0 5 10 15 20 VDS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics 3.0 ※ Notes : 2.5 1. VGS = 10 V 2. ID = 7.5 A 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 T , Junction Temperature [oC] J Fig.3 On-Resistance Variation with Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON) R [Ω ] 0.7 0.6 0.5 VGS=10.0V VGS=20V 0.4 0.3 9 12 15 18 21 24 27 30 33 36 39 42 45 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 ※ Notes : 1. VGS = 0 V 2. I = 250㎂ D 1.1 1.0 0.9 0.8 -50 0 50 100 150 TJ, Junction Temperature [oC] Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance IDR Reverse Drain Current [A] * Notes ; 1. Vds=30V 150℃ 25℃ -55℃ 10 ※ Notes : 1. V = 0 V GS 2.250s Pulse test 150℃ 25℃ 10 ID(A) 4 6 8 10 VGS [V] Fig.5 Transfer Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Aug. 2021 Version 1.2 3 Magnachip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDP15N60G / MDF15N60G N-Channel MOSFET 600V 10 ※ Note : ID = 15.0A 8 120V 300V 480V 6 4 2 0 0 10 20 30 40 50 QG, Total Gate Charge [nC] Fig.7 Gate Charge .


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