N-Ch 30V Fast Switching MOSFETs
QM3014M6
General Description
The QM3014M6 is the highest performance trench N-ch MOSFETs with extreme high cell density...
Description
QM3014M6
General Description
The QM3014M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3014M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS 30V
RDSON 12mΩ
ID 50A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
PRPAK56 Pin Configuration
D
Absolute Maximum Ratings
SSSG
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating 30 ±20 50 30 10 8 100 53 22 41.7 2
-55 to 150 -55 to 150
Units V V A A A A A mJ A W W ℃ ℃
Typ. -----
Max. 62 3
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