www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
ITO-220AB
PIN 1 PIN 3
123
PIN 2
FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C ITO-220AB
Diode variations
Common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Working peak reverse voltage Max. DC blocking voltage
Max. average forward rectified current at TC = 105 °C
total device per diode
VRRM VRWM VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
EAS
IRRM dV/dt TJ, TSTG VAC
MBRF1090CT MBRF10100CT 90 100 90 100 90 100 10 5.0
120
60
0.5
10 000 - 65 to + 150
1500
UNIT V V V
A
A
mJ
A V/μs °C
V
Revision: 16-Aug-13
1 Document Number: 89126
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBRF1090CT MBRF10100CT
Maximum instantaneous forward voltage per diode (1)
Maximum reverse current per diode at working peak reverse voltage (2)
IF = 5.0 A IF = 5.0 A
TC = 125 °C TC = 25 °C TJ = 25 °C TJ = 100 °C
VF IR
0.75 0.85 100 6.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
UNIT
V
μA mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
Typical thermal resistance per diode
RJC
MBRF10100CT 6.8
UNIT °C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
MBRF10100CT-M3/4W
1.75
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Peak Forward Surge Current (A)
12 Resistive or Inductive Load
10
8
6
4
2 Mounted on Specific Heatsink
0 0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
120 TJ = TJ Max.
100 8.3 ms Single Half Sine-Wave
80
60
40
20
0 1 10 100 Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode
Revision: 16-Aug-13
2 Document Number: 89126
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Average Power Loss (W)
4.0 D = 0.8
3.5 D = 0.3 D = 0.5
3.0 D = 0.2
2.5 D = 1.0
2.0 D = 0.1 1.5
T
1.0
0.5
D = tp/T
tp
0 0123456
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics Per Diode
Junction Capacitance (pF)
10 000 1000
TJ = 25 °C f = 1 MHz
Vsig = 50 mVp-p
100
10 0.1
1 10 Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance Per Diode
100 TA = 150 °C
Instantaneous Forward Current (A)
TA = 125 °C 10
1
TA = 100 °C
0.1 0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Transient Thermal Impedance (°C/W)
10 Junction to Case
1 0.01
0.1 1 10 t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Instantaneous Reverse Current (mA)
100
10 TA = 150 °C TA = 125 °C
1
TA = 100 °C 0.1
0.01
0.001
TA = 25 °C
0.0001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typi.