DatasheetsPDF.com

MBRF1090CT Dataheets PDF



Part Number MBRF1090CT
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet MBRF1090CT DatasheetMBRF1090CT Datasheet (PDF)

www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For .

  MBRF1090CT   MBRF1090CT


Document
www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C ITO-220AB Diode variations Common cathode MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Working peak reverse voltage Max. DC blocking voltage Max. average forward rectified current at TC = 105 °C total device per diode VRRM VRWM VDC IF(AV) Peak forward surge current 8.3 ms single half sine-wave  superimposed on rated load per diode IFSM Non-repetitive avalanche energy  at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage from terminal to heatsink with t = 1 min EAS IRRM dV/dt TJ, TSTG VAC MBRF1090CT MBRF10100CT 90 100 90 100 90 100 10 5.0 120 60 0.5 10 000 - 65 to + 150 1500 UNIT V V V A A mJ A V/μs °C V Revision: 16-Aug-13 1 Document Number: 89126 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBRF1090CT MBRF10100CT Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (2) IF = 5.0 A IF = 5.0 A TC = 125 °C TC = 25 °C TJ = 25 °C TJ = 100 °C VF IR 0.75 0.85 100 6.0 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms UNIT V μA mA THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRF1090CT Typical thermal resistance per diode RJC MBRF10100CT 6.8 UNIT °C/W ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) ITO-220AB MBRF10100CT-M3/4W 1.75 PACKAGE CODE BASE QUANTITY DELIVERY MODE 4W 50/tube Tube  RATINGS AND CHARACTERISTICS CURVES  (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Peak Forward Surge Current (A) 12 Resistive or Inductive Load 10 8 6 4 2 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 120 TJ = TJ Max. 100 8.3 ms Single Half Sine-Wave 80 60 40 20 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 16-Aug-13 2 Document Number: 89126 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Average Power Loss (W) 4.0 D = 0.8 3.5 D = 0.3 D = 0.5 3.0 D = 0.2 2.5 D = 1.0 2.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 0 0123456 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Per Diode Junction Capacitance (pF) 10 000 1000 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 Reverse Voltage (V) 100 Fig. 6 - Typical Junction Capacitance Per Diode 100 TA = 150 °C Instantaneous Forward Current (A) TA = 125 °C 10 1 TA = 100 °C 0.1 0 TA = 25 °C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode Transient Thermal Impedance (°C/W) 10 Junction to Case 1 0.01 0.1 1 10 t - Pulse Duration (s) 100 Fig. 7 - Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 100 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typi.


SK10100C MBRF1090CT MBRF10100CT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)