www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rect...
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
TMBS®
ITO-220AB
PIN 1 PIN 3
123
PIN 2
FEATURES Trench MOS
Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C ITO-220AB
Diode variations
Common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Working peak reverse voltage Max. DC blocking voltage
Max. average forward rectified current at TC = 105 °C
total device per diode
VRRM VRWM VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Non-repetitive a...