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QM3006S Dataheets PDF



Part Number QM3006S
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 30V Fast Switching MOSFETs
Datasheet QM3006S DatasheetQM3006S Datasheet (PDF)

QM3006S N-Ch 30V Fast Switching MOSFETs General Description The QM3006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3006S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS.

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QM3006S N-Ch 30V Fast Switching MOSFETs General Description The QM3006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3006S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 6mΩ ID 13A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration D D DD Absolute Maximum Ratings S SSG Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 30 ±20 13 10 65 231 46 1.5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 25 Unit ℃/W ℃/W Rev A.03 D071111 1 QM3006S N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=12A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=10A VDD=15V , VGS=10V , RG=3.3Ω ID=10A VDS=15V , VGS=0V , f=1MHz Min. 30 ------1.2 --------------------------------- Typ. --- 0.028 4.7 7.5 1.5 -6.16 ------47 1.7 21 7 6.9 9.6 8.6 59 15.6 2295 267 210 Max. ----6 9 2.5 --1 5 ±100 --2.9 29.4 9.8 9.7 19.2 15 118 31.2 3213 374 294 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=24A Min. 62.8 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------12 4.8 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=46A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Max. 13 65 1.2 ----- Unit A A V nS nC 2 Typical Characteristics 70 ID Drain Current (A) 60 VGS=10V 50 VGS=7V 40 VGS=5V VGS=4.5V 30 20 10 0 0 VGS=3V VDS , D0r.a2i5n-to-Source Vo0lt.a5ge (V) Fig.1 Typical Output Characteristics 0.75 12 10 IS -Source Current(A) 8 TJ=150℃ TJ=25℃ 6 4 2 0 0 0.3 0.6 VSD , Source-to-Drain Voltage (V) 0.9 Fig.3 Forward Characteristics of Reverse 1.8 1.4 Normalized VGS(th) 1 0.6 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 RDSON (mΩ) QM3006S N-Ch 30V Fast Switching MOSFETs 8 ID=12A 7 6 5 4 2468 VGS (V) Fig.2 On-Resistance vs. Gate-Source 10 Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.4 1.0 0.6 0.2 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 Capacitance (pF) QM3006S 10000 1000 100 F=1.0MHz Ciss Coss Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 1 DUTY=0.5 0.2 0.1 0.1 0.05 25 ID (A) N-Ch 30V Fast Switching MOSFETs 100.00 10.00 1.00 0.10 TA=25oC Single Pulse 0.01 0.01 0.1 VDS1(V) 10 Fig.8 Safe Operating Area 100us 1ms 10ms 100ms DC 100 0.01 0.01 SINGLE 0.001 0.0001 PDM T ON T D = TON/T TJpeak = TC+PDMXRθJC 0.001 0.01 0.1 1 t , Pulse Width (s) 10 Fig.9 Normalized Maximum Transient Thermal Impedance 100 1000 Normalized Thermal Response (RθJA) Fig.10 Switching Time.


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