Document
QM3006S
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3006S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 30V
RDSON 6mΩ
ID 13A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOP8 Pin Configuration
D D DD
Absolute Maximum Ratings
S SSG
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating 30 ±20 13 10 65 231 46 1.5
-55 to 150 -55 to 150
Units V V A A A mJ A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 85 25
Unit ℃/W ℃/W
Rev A.03 D071111
1
QM3006S
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=12A VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=10A
VDD=15V , VGS=10V , RG=3.3Ω ID=10A
VDS=15V , VGS=0V , f=1MHz
Min. 30 ------1.2 ---------------------------------
Typ. ---
0.028 4.7 7.5 1.5 -6.16 ------47 1.7 21 7 6.9 9.6 8.6 59 15.6 2295 267 210
Max. ----6 9 2.5 --1 5
±100 --2.9 29.4 9.8 9.7 19.2 15 118 31.2
3213 374 294
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=25V , L=0.1mH , IAS=24A
Min. 62.8
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
IF=10A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------12 4.8
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=46A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max. 13 65 1.2 -----
Unit A A V nS nC
2
Typical Characteristics
70
ID Drain Current (A)
60 VGS=10V
50 VGS=7V
40 VGS=5V VGS=4.5V
30
20
10
0 0
VGS=3V VDS , D0r.a2i5n-to-Source Vo0lt.a5ge (V)
Fig.1 Typical Output Characteristics
0.75
12
10
IS -Source Current(A)
8
TJ=150℃
TJ=25℃
6
4
2
0
0 0.3 0.6
VSD , Source-to-Drain Voltage (V)
0.9
Fig.3 Forward Characteristics of Reverse
1.8
1.4
Normalized VGS(th)
1
0.6
0.2 -50
0 50 100
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
150
RDSON (mΩ)
QM3006S
N-Ch 30V Fast Switching MOSFETs
8
ID=12A
7
6
5
4 2468
VGS (V)
Fig.2 On-Resistance vs. Gate-Source
10
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.4
1.0
0.6
0.2 -50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
Capacitance (pF)
QM3006S
10000 1000 100
F=1.0MHz Ciss Coss Crss
10 1 5 9 13 17 21
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1 DUTY=0.5
0.2
0.1 0.1 0.05
25
ID (A)
N-Ch 30V Fast Switching MOSFETs
100.00
10.00
1.00
0.10
TA=25oC
Single Pulse
0.01
0.01
0.1
VDS1(V)
10
Fig.8 Safe Operating Area
100us 1ms 10ms 100ms
DC
100
0.01 0.01
SINGLE
0.001 0.0001
PDM
T ON
T
D = TON/T TJpeak = TC+PDMXRθJC
0.001
0.01 0.1
1
t , Pulse Width (s)
10
Fig.9 Normalized Maximum Transient Thermal Impedance
100
1000
Normalized Thermal Response (RθJA)
Fig.10 Switching Time.