N-Channel MOSFET
P0903BTG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID 64A
TO-220
AB...
Description
P0903BTG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID 64A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current 1
TC = 25 °C TC = 100 °C
ID IDM
64 40 150
Avalanche Current
IAS 35
Avalanche Energy
L = 0.1mH
EAS
64
Power Dissipation
TC = 25 °C TC = 100 °C
PD
62.5 25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 58A.
SYMBOL RqJC
TYPICAL
MAXIMUM UNIT 2 °CS/ W
Ver 1.0
1 2012/4/16
P0903BTG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V
25 1.0 1.8 3.0
±100
Zero Gate Voltage Drain Current On-State Drain Current1
IDSS ID(ON)
VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V , TC = 125 °C
VDS = 5V, VGS = 10V
150
1 10
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON) gfs
VGS = 5V, ID = 20A VGS = 10V, ID = 20A VDS = 5V, ID = 20A
9.3 19 7.3 9.5 53
DYNAMIC
Input Capacitance
C...
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