Document
QM3016AD
General Description
N-Ch 30V Fast Switching MOSFETs
Product Summery
The QM3016AD is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016AD meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
BVDSS 30V
RDSON 4mΩ
ID 100A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
S G
Rating 10s Steady State
30 ±20 100 70 31 20 26 16 200 317 54 62.5 6 2.42 -55 to 175 -55 to 175
Units
V V A A A A A mJ A W W ℃ ℃
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case
1
Typ. -------
Max. 62 25 2.4
Unit ℃/W ℃/W ℃/W
Rev A.01 D061511
QM3016AD
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3Ω ID=15A
VDS=15V , VGS=0V , f=1MHz
Min. 30 ----1 ---------------------------------
Typ. ---
0.025 3.4 2 -7.1 ------47 1.6 23.4 11.4 8.2 12.6 9.6 55 5.6 2843 380 286
Max. ----4 3 --1 5
±100 --2.7 32.8 16.0 11.5 25.2 17.3
110.0 11.2 3980 532 400
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=25V , L=0.1mH , IAS=30A
Min. 98
Typ. ---
Max. -.