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QM3016AD Dataheets PDF



Part Number QM3016AD
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 30V Fast Switching MOSFETs
Datasheet QM3016AD DatasheetQM3016AD Datasheet (PDF)

QM3016AD General Description N-Ch 30V Fast Switching MOSFETs Product Summery The QM3016AD is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016AD meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features BVDSS 30V RDSON 4mΩ ID 100A Applications z High Frequency Point-of-Load Synchronous Buck Con.

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QM3016AD General Description N-Ch 30V Fast Switching MOSFETs Product Summery The QM3016AD is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016AD meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features BVDSS 30V RDSON 4mΩ ID 100A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available TO252 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S G Rating 10s Steady State 30 ±20 100 70 31 20 26 16 200 317 54 62.5 6 2.42 -55 to 175 -55 to 175 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case 1 Typ. ------- Max. 62 25 2.4 Unit ℃/W ℃/W ℃/W Rev A.01 D061511 QM3016AD N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3Ω ID=15A VDS=15V , VGS=0V , f=1MHz Min. 30 ----1 --------------------------------- Typ. --- 0.025 3.4 2 -7.1 ------47 1.6 23.4 11.4 8.2 12.6 9.6 55 5.6 2843 380 286 Max. ----4 3 --1 5 ±100 --2.7 32.8 16.0 11.5 25.2 17.3 110.0 11.2 3980 532 400 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=30A Min. 98 Typ. --- Max. -.


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