QM3202M3 Switching MOSFETs Datasheet

QM3202M3 Datasheet, PDF, Equivalent


Part Number

QM3202M3

Description

Dual N-Ch 30V Fast Switching MOSFETs

Manufacture

UBIQ

Total Page 4 Pages
Datasheet
Download QM3202M3 Datasheet


QM3202M3
QM3202M3
Dual N-Ch 30V Fast Switching MOSFETs
General Description
The QM3202M3 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3202M3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
RDSON
18mΩ
ID
28A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK3X3 Pin Configuration
D2 D1
S2 G1 S2 G2
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
28
18
55
72
21
20
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
75
6
Unit
/W
/W
Rev A.01 D031810
1

QM3202M3
QM3202M3
Dual N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=10A
VGS=4.5V , ID=5A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=10A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=10A
VDD=12V , VGS=10V , RG=3.3Ω
ID=5A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.022
16
24
1.5
-5.1
---
---
---
4.5
2.5
7.2
1.4
2.2
4.1
9.8
15.5
6.0
572
81
65
Max.
---
---
18
30
2.5
---
1
5
±100
---
5
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=10A
Min.
16
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
28
55
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Features QM3202M3 Dual N-Ch 30V Fast Switching MO SFETs General Description The QM3202M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and ga te charge for most of the synchronous b uck converter applications . The QM3202 M3 meet the RoHS and Green Product requ irement , 100% EAS guaranteed with full function reliability approved. Feature s z Advanced high cell density Trench t echnology z Super Low Gate Charge z Exc ellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Ab solute Maximum Ratings Product Summery BVDSS 30V RDSON 18mΩ ID 28A Appli cations z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UM PC/VGA z Networking DC-DC Power System z Load Switch PRPAK3X3 Pin Configuratio n D2 D1 S2 G1 S2 G2 Symbol VDS VGS ID @TC=25℃ ID@TC=100℃ IDM EAS IAS PD@T C=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed.
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