QM3208S Switching MOSFETs Datasheet

QM3208S Datasheet, PDF, Equivalent


Part Number

QM3208S

Description

Dual N-Ch 30V Fast Switching MOSFETs

Manufacture

UBIQ

Total Page 4 Pages
Datasheet
Download QM3208S Datasheet


QM3208S
QM3208S
Dual N-Ch 30V Fast Switching MOSFETs
General Description
The QM3208S is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3208S meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
30V
RDSON
25m
ID
6.2A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S1 G1 S2 G2
Rating
30
±20
6.2
5
25
26.6
12.7
1.5
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
25
Units
V
V
A
A
A
mJ
A
W
Unit
/W
/W
Rev A.01 D041811
1

QM3208S
QM3208S
Dual N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=6A
VGS=4.5V , ID=5A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=6A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=6A
VDD=15V , VGS=10V , RG=3.3Ω
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.023
20
30
1.5
-4.2
---
---
---
5.6
2.3
4.9
1.5
1.85
2.2
38.6
12.4
4.8
416
62
51
Max.
---
---
25
38
2.5
---
1
5
±100
---
4.6
6.9
2.1
2.6
4.4
69
25
9.6
582
87
71
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=6A
Min.
6
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=6A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
7.8
2.1
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
6.2
25
1.2
---
---
Unit
A
A
V
nS
nC
2


Features QM3208S Dual N-Ch 30V Fast Switching MOS FETs General Description The QM3208S i s the highest performance trench N-ch M OSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buc k converter applications . The QM3208S meet the RoHS and Green Product require ment with full function reliability app roved. Features z Advanced high cell de nsity Trench technology z Super Low Gat e Charge z Excellent Cdv/dt effect decl ine z Green Device Available Product S ummery BVDSS 30V RDSON 25mΩ ID 6.2 A Applications z High Frequency Point- of-Load Synchronous s Small power switc hing for MB/NB/UMPC/VGA z Networking DC -DC Power System z Load Switch SOP8 Pin Configuration D1 D1 D2 D2 Absolute Ma ximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C urrent, VGS @ 10V1 Continuous Drain Cur rent, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 A.
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