N-Channel MOSFET
R
JCS650
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
28.0A 200 V 0.085Ω 103nC
Package
N N- CHANNEL MOSFET
...
Description
R
JCS650
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
28.0A 200 V 0.085Ω 103nC
Package
N N- CHANNEL MOSFET
z z z UPS
APPLICATIONS
z High efficiency switch mode power supplies
z Electronic lamp ballasts based on half bridge
z UPS
z z Crss ( 81pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 81pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
JCS650C-O-C-N-B JCS650F-O-S-N- B JCS650S-O-S-N- A JCS650S-O-S-N-B
Marking
JCS650C JCS650F JCS650S JCS650S
Package Halogen Free Packaging
TO-220C TO-220MF TO-263 TO-263
NO NO NO NO
Tube Tube Reel Tube
Device Weight 2.15 g(typ) 2.20 g(typ) 1.37 g(typ) 1.37 g(typ)
:201408C
1/11
R
ABSOLUTE RATINGS (Tc=25℃)
JCS650
Value JCS650C
Parameter - Drain-Source Voltage
Symbol VDSS
JCS650S
JCS650F
200
Drain Current -continuous
ID T=25℃ T=100℃
28.0 17.7
28.0* 17.7*
( 1) Drain Current -pulse (note 1)
IDM
112 112*
Gate-Source Voltage
VGSS
±30
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
575
( 1) Avalanche Current (note 1)
IAR
28
( 1) Repetitive Avalanche Current (note 1)
EAR
15.8
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
5.5
Power Dissipation
PD TC=25℃ -Derate above 25℃
158 1.265
50 0.40
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering TL Purposes
300
* *Drain current limited by maximum junction temperature
Unit V A A A V m...
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