Si3456BDV

N-Channel 30-V (D-S) MOSFET Si3456BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.035 at VGS = 10 V 0.052 at VGS = 4.5 V ID (A) 6.0 4.9 FEATURES Halogen free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free) Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 6Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.0 4.5 4.8 3.6 Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a IS 1.7 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 55 92 28 Maximum 62.5 110 40 Unit °C/W Document Number: 72544 S09-0530-Rev. D, 06-Apr-09 www.vishay.com 1 Si3456BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = ...