Si3459DV

P-Channel 60-V (D-S) MOSFET Si3459DV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.220 at VGS = - 10 V 0.310 at VGS = - 4.5 V ID (A) ± 2.2 ± 1.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 (4) S (3) G 2.85 mm Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TC = 25 °C TC = 70 °C ID IDM Single Avalanche Current (L = 0.1 mH) IAS Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C PD TJ, Tstg Limit - 60 ± 20 ± 2.2 ± 1.7 ± 10 -7 2 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead t≤5s Steady State Steady State Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Symbol RthJA RthJL Typical 106 35 Maximum 62.5 Unit V A W °C Unit °C/W Document Number: 70877 S09-0765-Rev. D, 04-May-09 www.vishay.com 1 Si3459DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta...