Document
N-Channel 30-V (D-S) MOSFET
Si5480DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.016 at VGS = 10 V 0.022 at VGS = 4.5 V
PowerPAK ChipFET Single
ID (A)a 12 12
Qg (Typ.) 11 nC
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
1 2
D3
DD
4
8D 7D
6S
D G
S
5
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch for Portable Applications
• DC-DC Synchronous Rectification
Marking Code
AD XXX
Lot Traceability and Date Code
G
D
Part # Code
Bottom View
S
Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C TA = 70 °C
ID IDM
Continuous Source-Drain Diode Current Maximum Power Dissipation
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C
IS PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
12a 12a 10.7b, c 8.6b, c 30
12a 2.6b, c
31
20
3.1b, c 2b, c - 55 to 150
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t≤5s Steady State
RthJA RthJC
34 3
40 °C/W
4
Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73585 S-81448-Rev. B, 23-Jun-08
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Si5480DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 1 mA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current On-State Drain Currenta
IDSS ID(on)
VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea Forward Transconductancea
RDS(on) gfs
VGS = 10 V, ID = 7.2 A VGS = 4.5 V, ID = 6.1 A VDS = 15 V, ID = 7.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10.7 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10.7 A f = 1 MHz
VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C IS = 8.6 A, VGS = 0 V
IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. 30 1
30
Typ. Max. Unit
33 - 6.2
0.013 0.018
23
V
mV/°C
3 ± 100
1 10
0.016 0.022
V ns µA A Ω S
1230 210 115 22.5 11 4.4 3.7 5.9 100 140 35 15 10 10 40
8
0.85 20 15 13 7
34 17
150 210 55 25 15 15 60 15
12 30 1.2 40 30
pF
nC Ω
ns
A V ns nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73585 S-81448-Rev. B, 23-Jun-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 VGS = 10 thru 5 V
24 4 V
30 24
Si5480DU
Vishay Siliconix
I D - Drain Current (A)
ID - Drain Current (A)
18 18
TC = 125 °C 12 12
6 0 0.0
0.030
2V 3V
0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics
3.0
RDS(on) - On-Resistance (mΩ)
0.026
0.022 0.018
V.