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Si5480DU Dataheets PDF



Part Number Si5480DU
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet Si5480DU DatasheetSi5480DU Datasheet (PDF)

N-Channel 30-V (D-S) MOSFET Si5480DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.016 at VGS = 10 V 0.022 at VGS = 4.5 V PowerPAK ChipFET Single ID (A)a 12 12 Qg (Typ.) 11 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT 1 2 D3 DD 4 8D 7D 6S D G S 5 APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications.

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N-Channel 30-V (D-S) MOSFET Si5480DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.016 at VGS = 10 V 0.022 at VGS = 4.5 V PowerPAK ChipFET Single ID (A)a 12 12 Qg (Typ.) 11 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT 1 2 D3 DD 4 8D 7D 6S D G S 5 APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification Marking Code AD XXX Lot Traceability and Date Code G D Part # Code Bottom View S Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 30 ± 20 12a 12a 10.7b, c 8.6b, c 30 12a 2.6b, c 31 20 3.1b, c 2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State RthJA RthJC 34 3 40 °C/W 4 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73585 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 Si5480DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VGS = 10 V, ID = 7.2 A VGS = 4.5 V, ID = 6.1 A VDS = 15 V, ID = 7.2 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10.7 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. VDS = 15 V, VGS = 4.5 V, ID = 10.7 A f = 1 MHz VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 10 V, Rg = 1 Ω TC = 25 °C IS = 8.6 A, VGS = 0 V IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C Min. 30 1 30 Typ. Max. Unit 33 - 6.2 0.013 0.018 23 V mV/°C 3 ± 100 1 10 0.016 0.022 V ns µA A Ω S 1230 210 115 22.5 11 4.4 3.7 5.9 100 140 35 15 10 10 40 8 0.85 20 15 13 7 34 17 150 210 55 25 15 15 60 15 12 30 1.2 40 30 pF nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73585 S-81448-Rev. B, 23-Jun-08 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 VGS = 10 thru 5 V 24 4 V 30 24 Si5480DU Vishay Siliconix I D - Drain Current (A) ID - Drain Current (A) 18 18 TC = 125 °C 12 12 6 0 0.0 0.030 2V 3V 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.0 RDS(on) - On-Resistance (mΩ) 0.026 0.022 0.018 V.


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