Si5481DU

New Product P-Channel 20-V (D-S) MOSFET Si5481DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = - 4.5 V - 20 0.029 at VGS = - 2.5 V 0.041 at VGS = - 1.8 V ID (A) - 12a - 12a - 12a PowerPAK ChipFET Single 1 2 D3 DD 4 8D 7D 6S D G S 5 Qg (Typ.) 20 nC FEATURES Halogen-free TrenchFET® Power MOSFET New thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT APPLICATIONS Load Switch, Battery Switch, PA Switch and Charger Switch for Portable Devices S Marking Code BC XXX Lot Traceability and Date Code Part # Code G Bottom View Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg D P-Channel MOSFET Limit - 20 ±8 - 12a - 12a - 9.7b, c - 7.8b, c - 20 - 14.8 - 2.6b, c 17.8 11.4 3.1b, c 2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol Rt...