P-Channel MOSFET
New Product
P-Channel 20-V (D-S) MOSFET
Si5481DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS ...
Description
New Product
P-Channel 20-V (D-S) MOSFET
Si5481DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = - 4.5 V
- 20 0.029 at VGS = - 2.5 V
0.041 at VGS = - 1.8 V
ID (A) - 12a - 12a - 12a
PowerPAK ChipFET Single
1 2
D3
DD
4
8D 7D
6S
D G
S
5
Qg (Typ.) 20 nC
FEATURES
Halogen-free TrenchFET® Power MOSFET New thermally Enhanced PowerPAK®
ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
Load Switch, Battery Switch, PA Switch and Charger Switch for Portable Devices S
Marking Code
BC XXX Lot Traceability and Date Code
Part # Code
G
Bottom View Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit - 20 ±8 - 12a - 12a - 9.7b, c - 7.8b, c - 20 - 14.8 - 2.6b, c 17.8 11.4 3.1b, c 2b, c - 55 to 150 260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t≤5s Steady State
Symbol Rt...
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