Dual N-Ch Fast Switching MOSFETs
QM3809M6
General Description
The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density...
Description
QM3809M6
General Description
The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3809M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Dual N-Ch Fast Switching MOSFETs
Product Summery
CH Die1 Die2
BVDSS 30V 30V
RDSON 9mΩ 5.5mΩ
ID 57A 72A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z CCFL Back-light Inverter
PRPAK5X6 Pin Configuration S2 S2 S2 G2
S1/D2
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
D1D1D1 G1
Rating
Die1
Die2
30 30
±20
±20
57 72
36 46
12 15
...
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