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QM6004F Dataheets PDF



Part Number QM6004F
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 60V Fast Switching MOSFETs
Datasheet QM6004F DatasheetQM6004F Datasheet (PDF)

QM6004F N-Ch 60V Fast Switching MOSFETs General Description The QM6004F is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS.

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QM6004F N-Ch 60V Fast Switching MOSFETs General Description The QM6004F is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 60V RDSON 30mΩ ID 20A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch TO220F Pin Configuration Absolute Maximum Ratings S GD Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 60 ±20 20 12 40 34.5 22.6 23 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 5.4 Unit ℃/W ℃/W Rev A.01 D102109 1 QM6004F N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=60V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=15A VDS=24V , VGS=0V , f=1MHz VDS=48V , VGS=4.5V , ID=10A VDD=30V , VGS=10V , RG=3.3Ω, ID=10A VDS=25V , VGS=0V , f=1MHz Min. 60 ------1.2 --------------------------------- Typ. --- 0.063 25 30 -5.24 ------17 3.2 12.56 3.24 6.31 8 14.2 24.4 4.6 1345 72.5 54.4 Max. ----30 38 2.5 --1 5 ±100 --- --------------------- Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=15A Min. 15.2 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Min. ------- Typ. ------- Max. 20 40 1..


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