Document
QM6004F
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6004F is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 60V
RDSON 30mΩ
ID 20A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter.
z Networking DC-DC Power System z Load Switch
TO220F Pin Configuration
Absolute Maximum Ratings
S GD
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating 60 ±20 20 12 40 34.5 22.6 23
-55 to 150 -55 to 150
Units V V A A A mJ A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 62 5.4
Unit ℃/W ℃/W
Rev A.01 D102109
1
QM6004F
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=60V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=15A VDS=24V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=10A
VDD=30V , VGS=10V , RG=3.3Ω, ID=10A
VDS=25V , VGS=0V , f=1MHz
Min. 60 ------1.2 ---------------------------------
Typ. ---
0.063 25 30
-5.24 ------17 3.2
12.56 3.24 6.31
8 14.2 24.4 4.6 1345 72.5 54.4
Max. ----30 38 2.5 --1 5
±100 ---
---------------------
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=25V , L=0.1mH , IAS=15A
Min. 15.2
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
Min. -------
Typ. -------
Max. 20 40 1..