PA210BC

PA210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS = 10V ID 3A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3 1.9 26 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 34 Power Dissipation TA = 25 °C TA = 70 °C PD 2 0.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 60 °C / W Ver 1.0 1 2012/4/12 PA210BC N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 3A VGS = 10V, ID = 3A VDS = 5V, ID = 3A 100 123 ±100 1 10 26 104 130 94 120 10 DYNAMIC Input Capacitance Output Capacitance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 1410 114 Reverse Trans...