N-Ch and P-Ch Fast Switching MOSFETs
QM2601S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2601S is the highest performance trench N-ch and...
Description
QM2601S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2601S meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V -20V
RDSON 18mΩ 50mΩ
ID 7.2A -4.5A
Applications
z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
Dual SOP8 Pin Configuration D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
P-Ch
20 -20
±12
±12
7.2 -4.5
5.8 -3.6
35 -23
1.5 1.5
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 85 25
Units V V A A A W ℃ ℃
Unit ℃/W ℃/W
Rev A.03 D052011
1
QM2601S
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics...
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