QM2605V

General Description The QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2605V meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available QM2605V N-Ch and P-Ch Fast Switching MOSFETs Product Summery BVDSS 20V -20V RDSON 48mΩ 130mΩ ID 3.8A -2.5A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Rating N-Channel P-Channel Steady Steady 10s State 10s State 20 -20 ±8 ±8 4.3 3.8 -2.9 -2.5 3.4 3 -2.3 -2 15.2 -10 1.5 1.1 1.5 1.1 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 1 Typ. ------- Max. 110 85 70 Unit ℃/W ℃/W...