Document
QM3303S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM3303S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3303S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 30V -30V
RDSON 25mΩ 62mΩ
ID 7.5A -5A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z CCFL Back-light Inverter
Dual SOP8 Pin Configuration D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
P-Ch
30 -30
±20
±20
7.5 -5
5.8 -3.8
15 -10
26.6 37
12.7 15
2.08 2.08
-55 to 150
2.08
-55 to 150
-55 to 150
Units
V V A A A mJ A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ. -----
Max. 85 60
Unit ℃/W ℃/W
Rev A.01 D042010
QM3303S
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=7A VGS=4.5V , ID=5A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=7A VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=7A
VDD=12V , VGS=10V , RG=3.3Ω ID=7A
VDS=15V , VGS=0V , f=1MHz
Min. 30 ------1.0 ---------------------------------
Typ. ---
0.023 20 30 1.5 -4.2 ------12.8 2.3 5 1.11 2.61 7.7 46 11 3.6 416 62 51
Max. ----25 38 2.5 --1 5
±100 --4.6 ---------------------
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=25V , L=0.1mH , IAS=6A
Min. 6
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
Min. -------
Typ. -------
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max. 7.5 15 1.2
Unit A A V
2
QM3303S
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-10V , ID=-4A VGS=-4.5V , ID=-2A VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ VDS=-24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=-5V , ID=-3A VDS=0V , VGS=0V , f=1MHz
VDS=-20V , VGS=-4.5V , ID=-5A
VDD=-15V , VGS=-10V , RG=3.3Ω ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min. -30 -------1.0 ---------------------------------
Typ. ---
-0.02 50 85 -1.5 4.32 ------5.5 24 5.22 1.25 2.3 18.4 11.4 39.4 5.2 463 82 68
Max. ----62 100 -2.5 ---1 -5
±100 --48 ---------------------
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
C.