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QM3303S Dataheets PDF



Part Number QM3303S
Manufacturers UBIQ
Logo UBIQ
Description N-Ch and P-Ch Fast Switching MOSFETs
Datasheet QM3303S DatasheetQM3303S Datasheet (PDF)

QM3303S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM3303S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3303S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect declin.

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QM3303S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM3303S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3303S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V -30V RDSON 25mΩ 62mΩ ID 7.5A -5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Dual SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S1 G1S2 G2 Rating N-Ch P-Ch 30 -30 ±20 ±20 7.5 -5 5.8 -3.8 15 -10 26.6 37 12.7 15 2.08 2.08 -55 to 150 2.08 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 1 Typ. ----- Max. 85 60 Unit ℃/W ℃/W Rev A.01 D042010 QM3303S N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=7A VGS=4.5V , ID=5A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=7A VDS=0V , VGS=0V , f=1MHz VDS=20V , VGS=4.5V , ID=7A VDD=12V , VGS=10V , RG=3.3Ω ID=7A VDS=15V , VGS=0V , f=1MHz Min. 30 ------1.0 --------------------------------- Typ. --- 0.023 20 30 1.5 -4.2 ------12.8 2.3 5 1.11 2.61 7.7 46 11 3.6 416 62 51 Max. ----25 38 2.5 --1 5 ±100 --4.6 --------------------- Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=6A Min. 6 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Min. ------- Typ. ------- Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Max. 7.5 15 1.2 Unit A A V 2 QM3303S N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-10V , ID=-4A VGS=-4.5V , ID=-2A VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ VDS=-24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=-5V , ID=-3A VDS=0V , VGS=0V , f=1MHz VDS=-20V , VGS=-4.5V , ID=-5A VDD=-15V , VGS=-10V , RG=3.3Ω ID=-1A VDS=-15V , VGS=0V , f=1MHz Min. -30 -------1.0 --------------------------------- Typ. --- -0.02 50 85 -1.5 4.32 ------5.5 24 5.22 1.25 2.3 18.4 11.4 39.4 5.2 463 82 68 Max. ----62 100 -2.5 ---1 -5 ±100 --48 --------------------- Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 C.


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