Si8404DB

N-Channel 1.5-V (G-S) MOSFET Si8404DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.033 at VGS = 2.5 V 8 0.035 at VGS = 1.8 V 0.043 at VGS = 1.5 V ID (A)a 12.2 11.6 11.2 10.2 Qg (Typ.) 20 nC FEATURES TrenchFET® Power MOSFET Industry First 1.5 V Rated MOSFET Ultra Small MICRO FOOT® Chipscale RoHS COMPLIANT Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life MICRO FOOT Bump Side View Backside View 3 D 2 D 8404 XXX S 4 G 1 D Device Marking: 8404 xxx = Date/Lot Traceability Code G Ordering Information: Si8404DB-T1-E1 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 8 Gate-Source Voltage VGS ±5 TC = 25 °C 12.2 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 9.8 8.1b,c TA = 70 °C 6.5b,c Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5.2 2.3b,c TC = 25 °C 6.25 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 4 2.78b,c TA = 70 °C 1.78b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Package Reflow Conditionsd IR/Convection 260 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020C), no manual ...