SUM47N10-24L

SUM47N10-24L Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.024 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A) 47 44 FEATURES TrenchFET® Power MOSFET 175 °C Maximum Junction Temperature 100 % Rg Tested RoHS COMPLIANT TO-263 G DS Top View Ordering Information: SUM47N10-24L-E3 (Lead (Pb)-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Single Pulse Avalanche Current IAS Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. PCB Mount Free Air Symbol RthJA RthJC Document Number: 72827 S-80272-Rev. C, 11-Feb-08 Limit 100 ± 20 47 27 70 47 40 80 136b 3.75a - 55 to 175 Unit V A mJ W °C Maximum 40 62.5 1.1 Unit °C/W www.vishay.com 1 SUM47N10-24L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current...