SiR888DP

New Product N-Channel 25-V (D-S) MOSFET SiR888DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.00325 at VGS = 10 V 25 0.0040 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 35.5 nC FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS Low-Side Switch in Synchronous Buck Converter 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SIR888DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 25 ± 16 40g 40g 29b, c 23b, c 70 40g 4.5b, c 40 80 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 20 2.1 25 °C/W 2.6 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4...