Si5858DU

Si5858DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V ID (A)a 6 6 6 Qg (Typ.) 6 nC SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage 20 0.375 at 1 A IF (A)a 1 PowerPAK ChipFET Dual FEATURES Halogen-free LITTLE FOOT® Plus Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile APPLICATIONS Load Switch for Portable Applications - Ideal for Boost Circuits 1 A2 K 8 K 7 A D 6 D 5 3 S4 G 1.9 mm Marking Code JB XXX Lot Traceability and Date Code Part # Code DK G RoHS COMPLIANT Bottom View Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free) SA N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °...