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QM01N65L

UBIQ

N-Ch 650V Fast Switching MOSFETs

QM01N65L 1 2011-06-15 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM01N65L is the highest perfo...


UBIQ

QM01N65L

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Description
QM01N65L 1 2011-06-15 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM01N65L meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 12 Ω ID 0.2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO-92 Pin Configuration Absolute Maximum Ratings G D S Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 650 ±30 0.2 0.15 1 0.89 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient (Steady State)1 Typ. --- Max. 140 Unit ℃/W Rev A.01 D053011 1 QM01N65L 2 2011-06-15 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-...




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