N-Ch 650V Fast Switching MOSFETs
QM01N65L
1
2011-06-15 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM01N65L is the highest perfo...
Description
QM01N65L
1
2011-06-15 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM01N65L meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 650V
RDSON 12 Ω
ID 0.2A
Applications
z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter
TO-92 Pin Configuration
Absolute Maximum Ratings
G D S
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating 650 ±30 0.2 0.15 1 0.89
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol RθJA
Parameter Thermal Resistance Junction-ambient (Steady State)1
Typ. ---
Max. 140
Unit ℃/W
Rev A.01 D053011
1
QM01N65L
2
2011-06-15 - 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-...
Similar Datasheet