Power Transistor. 2N3055 Datasheet

2N3055 Transistor. Datasheet pdf. Equivalent

Part 2N3055
Description NPN Power Transistor
Feature Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compli.
Manufacture TAITRON
Datasheet
Download 2N3055 Datasheet



2N3055
Power Transistor (NPN)
Features
General Purpose Switching and Amplifier Applications
RoHS Compliant
Power Transistor (NPN)
2N3055
Mechanical Data
Case:
Terminals:
Weight:
TO-3, Metal Can Package
Solderable per MIL-STD-202, Method 208
20 grams (approx)
TO-3
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage (RBE=100)
VEBO
Emitter-Base Voltage
IC Collector Current Continuous
IB Base Current
Total Power Dissipation at TC=25°C
PD
Derate above TC=25°C
RθJC
Thermal Resistance from Junction to Case
TJ, TSTG Operating Junction and Storage Temperature Range
2N3055
100
60
70
7
15
7
115
0.657
1.52
-65 to +200
Unit
V
V
V
V
A
A
W
W/° C
° C /W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH
Page 1 of 4



2N3055
Power Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
2N3055
Symbol
Description
Min.
VCEO(sus) * Collector-Emitter Sustaing Voltage
VCER(sus) * Collector-Emitter Sustaing Voltage
hFE*
D.C. Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(on) * Base-Emitter On Voltage
ICEX
Collector-Emitter Cut-off Current
60
70
20
5
-
-
-
-
-
ICEO
IEBO
IS/b
fT
hfe
fhfe
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
Second Breakdown Collector Current with
Base Forward Biased
Current-Gain Bandwidth Product
Small Signal Current Gain
Small Signal Current Gain Cut-off
Frequency
-
-
2.87
2.5
15
10
*Pulse Test: Pulse Width300µs, Duty Cycle2%
Max.
70
-
1.1
3.0
1.5
1.0
5.0
0.7
5.0
-
-
120
-
Unit
Conditions
V
V
V
V
V
mA
mA
mA
mA
A
MHz
KHz
IC=200mA, IB=0
IC=200mA,
RBE=100
VCE=4V, IC=4A
VCE=4V, IC=10A
IC=4A, IB=400mA
IC=10A, IB=3.3A
VCE=4V, IC=4A
VCE=100V,
VBE=(off)=1.5V
VCE=100V,
VBE=(off)=1.5V,
TC=150° C
VCE=30V, IB=0
VBE=7V, IC=0
VCE=40V, t=1.0S,
Nonrepetitive
VCE=10V, IC=0.5A,
f=1MHz
VCE=4V, IC=1A,
f=1KHz
VCE=4V, IC=1A,
f=1KHz
www.taitroncomponents.com
Rev. A/AH
Page 2 of 4





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