Power Transistors. 2N3055 Datasheet

2N3055 Transistors. Datasheet pdf. Equivalent

Part 2N3055
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N3055 DESCRIPTION ·Wit.
Manufacture SavantIC
Datasheet
Download 2N3055 Datasheet



2N3055
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3055
DESCRIPTION
·With TO-3 package
·Complement to type MJ2955
·DC Current Gain -hFE = 20–70 @ IC = 4 Adc
·Collector–Emitter Saturation Voltage -
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
·Excellent Safe Operating Area
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
60
7
15
7
115
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.52
UNIT
/W



2N3055
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3055
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCER
Collector-emitter sustaining voltage IC=0.2A ;RBE=100A
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A
VBE Base-emitter on voltage
IC=4A ; VCE=4V
ICEO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCE=30V; IB=0
VCE=100V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
Is/b
fT
DC current gain
IC=10A ; VCE=4V
Second breakdown collector current VCE=40Vdc,t=1.0s,
With base forward biased
Nonrepetitive
Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
60 V
70 V
1.1 V
3.0 V
1.5 V
0.7 mA
1.0
5.0
mA
5.0 mA
20 70
5.0
2.87 A
2.5 MHz
2





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