2N3903

2N3903 2N3904 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V BVCBO IC=10μA BVCEO IC=1.0mA BVEBO IE=10μA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=100mA hfe VCE=10V, IC=1.0mA, f=1.0kHz fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=100kHz Cib VEB=0.5V, IC=0, f=100kHz NF VCE=5.0V, IC=100μA, RS=1.0kΩ f=10Hz to 15.7kHz ton VCC=3.0V, VBE(OFF)=0.5V, IC=10mA IB1=1.0mA toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 2N3903 MIN MAX - 50 60 - 40 - 6.0 - - 0.2 - 0.3 0.65 0.85 - 0.95 20 - 35 - 50 200 30 - 15 - 50 200 250 - - 4.0 - 8.0 - 6.0 - 70 - 225 2N3904 MIN MAX - 50 60 - 40 - 6.0 - - ...