2N3903 2N3904
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N390...
2N3903 2N3904
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon
NPN transistors designed for general purpose amplifier and switching applications.
PNP complementary types are 2N3905 and 2N3906.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
ΘJA
60 40 6.0 200 625 -65 to +150
200
UNITS V V V mA
mW °C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=100mA
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
fT
VCE=20V, IC=10mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
ton
VCC=3.0V, VBE(OFF)=0.5V, IC=10mA
IB1=1.0mA
toff
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
2N3903
MIN MAX
-
50
60
-
40
-
6.0
-
-
0.2
-
0.3
0.65 0.85
-
0.95
20
-
35
-
50
200
30
-
15
-
50
200
250
-
-
4.0
-
8.0
-
6.0
-
70
-
225
2N3904
MIN MAX
-
50
60
-
40
-
6.0
-
-
...